Method of depositing charge trapping polycrystalline silicon films on silicon substrates with controllable film stress

ABSTRACT

A semiconductor on insulator multilayer structure is provided. The multilayer comprises a high resistivity single crystal semiconductor handle substrate, a textured oxide, nitride, or oxynitride layer, a polycrystalline silicon layer, a dielectric layer, and a single crystal semiconductor device layer. The multilayer structure is prepared in a manner that reduces wafer bow.

CROSS-REFERENCE TO RELATED APPLICATION

This application is continuation application of U.S. application Ser.No. 15/554,034, filed Aug. 28, 2017, the disclosure of which is herebyincorporated by reference in its entirety. U.S. application Ser. No.15/554,034 is a National Stage application of International ApplicationNo. PCT/US2016/019464, filed on Feb. 25, 2016, the disclosure of whichis hereby incorporated by reference in its entirety. InternationalApplication No. PCT/US2016/019464 claims priority to U.S. Provisionalpatent application Ser. No. 62/127,418 filed on Mar. 3, 2015, thedisclosure of which is hereby incorporated by reference in its entirety.

THE FIELD OF THE INVENTION

The present invention generally relates to the field of semiconductorwafer manufacture. More specifically, the present invention relates to amethod for forming a semiconductor-on-insulator (e.g.,silicon-on-insulator) structure comprising a charge trapping layer.

BACKGROUND OF THE INVENTION

Semiconductor wafers are generally prepared from a single crystal ingot(e.g., a silicon ingot) which is trimmed and ground to have one or moreflats or notches for proper orientation of the wafer in subsequentprocedures. The ingot is then sliced into individual wafers. Whilereference will be made herein to semiconductor wafers constructed fromsilicon, other materials may be used to prepare semiconductor wafers,such as germanium, silicon carbide, silicon germanium, or galliumarsenide.

Semiconductor wafers (e.g., silicon wafers) may be utilized in thepreparation of composite layer structures. A composite layer structure(e.g., a semiconductor-on-insulator, and more specifically, asilicon-on-insulator (SOI) structure) generally comprises a handle waferor layer, a device layer, and an insulating (i.e., dielectric) film(typically an oxide layer) between the handle layer and the devicelayer. Generally, the device layer is between 0.01 and 20 micrometersthick, such as between 0.05 and 20 micrometers thick. In general,composite layer structures, such as silicon-on-insulator (SOI),silicon-on-sapphire (SOS), and silicon-on-quartz, are produced byplacing two wafers in intimate contact, followed by a thermal treatmentto strengthen the bond.

After thermal anneal, the bonded structure undergoes further processingto remove a substantial portion of the donor wafer to achieve layertransfer. For example, wafer thinning techniques, e.g., etching orgrinding, may be used, often referred to as back etch SOI (i.e., BESOI),wherein a silicon wafer is bound to the handle wafer and then slowlyetched away until only a thin layer of silicon on the handle waferremains. See, e.g., U.S. Pat. No. 5,189,500, the disclosure of which isincorporated herein by reference as if set forth in its entirety. Thismethod is time-consuming and costly, wastes one of the substrates andgenerally does not have suitable thickness uniformity for layers thinnerthan a few microns.

Another common method of achieving layer transfer utilizes a hydrogenimplant followed by thermally induced layer splitting. Particles (e.g.,hydrogen atoms or a combination of hydrogen and helium atoms) areimplanted at a specified depth beneath the front surface of the donorwafer. The implanted particles form a cleave plane in the donor wafer atthe specified depth at which they were implanted. The surface of thedonor wafer is cleaned to remove organic compounds deposited on thewafer during the implantation process.

The front surface of the donor wafer is then bonded to a handle wafer toform a bonded wafer through a hydrophilic bonding process. Prior tobonding, the donor wafer and/or handle wafer are activated by exposingthe surfaces of the wafers to plasma containing, for example, oxygen ornitrogen. Exposure to the plasma modifies the structure of the surfacesin a process often referred to as surface activation, which activationprocess renders the surfaces of one or both of the donor water andhandle wafer hydrophilic. The wafers are then pressed together, and abond is formed there between. This bond is relatively weak, and must bestrengthened before further processing can occur.

In some processes, the hydrophilic bond between the donor wafer andhandle wafer (i.e., a bonded wafer) is strengthened by heating orannealing the bonded wafer pair. In some processes, wafer bonding mayoccur at low temperatures, such as between approximately 300° C. and500° C. In some processes, wafer bonding may occur at high temperatures,such as between approximately 800° C. and 1100° C. The elevatedtemperatures cause the formation of covalent bonds between the adjoiningsurfaces of the donor wafer and the handle wafer, thus solidifying thebond between the donor wafer and the handle wafer. Concurrently with theheating or annealing of the bonded wafer, the particles earlierimplanted in the donor wafer weaken the cleave plane.

A portion of the donor wafer is then separated (i.e., cleaved) along thecleave plane from the bonded wafer to form the SOI wafer. Cleaving maybe carried out by placing the bonded wafer in a fixture in whichmechanical force is applied perpendicular to the opposing sides of thebonded wafer in order to pull a portion of the donor wafer apart fromthe bonded wafer. According to some methods, suction cups are utilizedto apply the mechanical force. The separation of the portion of thedonor wafer is initiated by applying a mechanical wedge at the edge ofthe bonded wafer at the cleave plane in order to initiate propagation ofa crack along the cleave plane. The mechanical force applied by thesuction cups then pulls the portion of the donor wafer from the bondedwafer, thus forming an SOI wafer.

According to other methods, the bonded pair may instead be subjected toan elevated temperature over a period of time to separate the portion ofthe donor wafer from the bonded wafer. Exposure to the elevatedtemperature causes initiation and propagation of a crack along thecleave plane, thus separating a portion of the donor wafer. This methodallows for better uniformity of the transferred layer and allows recycleof the donor wafer, but typically requires heating the implanted andbonded pair to temperatures approaching 500° C.

The use of high resistivity semiconductor-on-insulator (e.g.,silicon-on-insulator) wafers for RF related devices such as antennaswitches offers benefits over traditional substrates in terms of costand integration. To reduce parasitic power loss and minimize harmonicdistortion inherent when using conductive substrates for high frequencyapplications it is necessary, but not sufficient, to use substratewafers with a high resistivity. Accordingly, the resistivity of thehandle wafer for an RF device is generally greater than about 500Ohm-cm. With reference now to FIG. 1, a silicon on insulator structure 2comprises a very high resistivity silicon wafer 4, a buried oxide (BOX)layer 6, and a silicon device layer 10. Such a substrate is prone toformation of high conductivity charge inversion or accumulation layers12 at the BOX/handle interface causing generation of free carriers(electrons or holes), which reduce the effective resistivity of thesubstrate and give rise to parasitic power losses and devicenonlinearity when the devices are operated at RF frequencies. Theseinversion/accumulation layers can be due to BOX fixed charge, oxidetrapped charge, interface trapped charge, and even DC bias applied tothe devices themselves.

A method is required therefore to trap the charge in any inducedinversion or accumulation layers so that the high resistivity of thesubstrate is maintained even in the very near surface region. It isknown that charge trapping layers (CTL) between the high resistivityhandle substrates and the buried oxide (BOX) may improve the performanceof RF devices fabricated using SOI wafers. A number of methods have beensuggested to form these high interface trap layers. For example, withreference now to FIG. 2, one of the method of creating asemiconductor-on-insulator 20 (e.g., a silicon-on-insulator, or SOI)with a CTL for RF device applications is based on depositing an undopedpolycrystalline silicon film 28 on a silicon substrate having highresistivity 22 and then forming a stack of oxide 24 and top siliconlayer 26 on it. A polycrystalline silicon layer 28 acts as a highdefectivity layer between the silicon substrate 22 and the buried oxidelayer 24. See FIG. 2, which depicts a polycrystalline silicon film foruse as a charge trapping layer 28 between a high resistivity substrate22 and the buried oxide layer 24 in a silicon-on-insulator structure 20.An alternative method is the implantation of heavy ions to create a nearsurface damage layer. Devices, such as radiofrequency devices, are builtin the top silicon layer 26.

It has been shown in academic studies that the polycrystalline siliconlayer in between of the oxide and substrate improves the deviceisolation, decreases transmission line losses, and reduces harmonicdistortions. See, for example: H. S. Gamble, et al. “Low-loss CPW lineson surface stabilized high resistivity silicon,” Microwave Guided WaveLett., 9(10), pp. 395-397, 1999; D. Lederer, R. Lobet and J.-P. Raskin,“Enhanced high resistivity SOI wafers for RF applications,” IEEE Intl.SOI Conf., pp. 46-47, 2004; D. Lederer and J.-P. Raskin, “New substratepassivation method dedicated to high resistivity SOI wafer fabricationwith increased substrate resistivity,” IEEE Electron Device Letters,vol. 26, no. 11, pp. 805-807, 2005; D. Lederer, B. Aspar, C. Laghae andJ.-P. Raskin, “Performance of RF passive structures and SOI MOSFETstransferred on a passivated HR SOI substrate,” IEEE International SOIConference, pp. 29-30, 2006; and Daniel C. Kerr et al. “Identificationof RF harmonic distortion on Si substrates and its reduction using atrap-rich layer”, Silicon Monolithic Integrated Circuits in RF Systems,2008. SiRF 2008 (IEEE Topical Meeting), pp. 151-154, 2008.

SUMMARY OF THE INVENTION

Briefly, the present invention is directed to a method of preparing amultilayer structure. The method comprises: forming a semiconductoroxide layer, a semiconductor nitride layer, or a semiconductoroxynitride layer in interfacial contact with a front surface of a singlecrystal semiconductor handle substrate, the single crystal semiconductorhandle substrate comprising two major, generally parallel surfaces, oneof which is the front surface of the single crystal semiconductor handlesubstrate and the other of which is a back surface of the single crystalsemiconductor handle substrate, a circumferential edge joining the frontand back surfaces of the single crystal semiconductor handle substrate,a central plane between the front surface and the back surface of thesingle crystal semiconductor handle substrate, and a bulk region betweenthe front and back surfaces of the single crystal semiconductor handlesubstrate, wherein the single crystal semiconductor handle substrate hasa minimum bulk region resistivity of at least about 500 ohm-cm;annealing the single crystal semiconductor handle substrate comprisingthe semiconductor oxide layer, the semiconductor nitride layer, or thesemiconductor oxynitride layer in interfacial contact with the frontsurface thereof in an ambient atmosphere comprising a gas selected fromthe group consisting of hydrogen, hydrogen chloride, chlorine, and anycombination thereof; depositing a polycrystalline silicon layer on thesemiconductor oxide layer, the semiconductor nitride layer, or thesemiconductor oxynitride layer in interfacial contact with the frontsurface the single crystal semiconductor handle substrate, wherein thepolycrystalline silicon layer is deposited by chemical vapor deposition;and bonding a dielectric layer on a front surface of a single crystalsemiconductor donor substrate to the polycrystalline silicon layer ofthe single crystal semiconductor handle substrate to thereby form abonded structure, wherein the single crystal semiconductor donorsubstrate comprises two major, generally parallel surfaces, one of whichis the front surface of the semiconductor donor substrate and the otherof which is a back surface of the semiconductor donor substrate, acircumferential edge joining the front and back surfaces of thesemiconductor donor substrate, and a central plane between the front andback surfaces of the semiconductor donor substrate.

The invention is further directed to a method of preparing a multilayerstructure. The method comprises: forming a semiconductor oxide layer, asemiconductor nitride layer, or a semiconductor oxynitride layer ininterfacial contact with a front surface of a single crystalsemiconductor handle substrate, the single crystal semiconductor handlesubstrate comprising two major, generally parallel surfaces, one ofwhich is the front surface of the single crystal semiconductor handlesubstrate and the other of which is a back surface of the single crystalsemiconductor handle substrate, a circumferential edge joining the frontand back surfaces of the single crystal semiconductor handle substrate,a central plane between the front surface and the back surface of thesingle crystal semiconductor handle substrate, and a bulk region betweenthe front and back surfaces of the single crystal semiconductor handlesubstrate, wherein the single crystal semiconductor handle substrate hasa minimum bulk region resistivity of at least about 500 ohm-cm;annealing the single crystal semiconductor handle substrate comprisingthe semiconductor oxide layer, the semiconductor nitride layer, or thesemiconductor oxynitride layer in interfacial contact with the frontsurface thereof in an ambient atmosphere comprising a gas selected fromthe group consisting of hydrogen, hydrogen chloride, chlorine, and anycombination thereof; exposing the single crystal semiconductor handlesubstrate comprising the semiconductor oxide layer, the semiconductornitride layer, or the semiconductor oxynitride layer in interfacialcontact with the front surface thereof to an ambient atmospherecomprising a silicon precursor at a temperature of at least about 850°C. to thereby deposit a polycrystalline silicon layer on thesemiconductor oxide layer, the semiconductor nitride layer, or thesemiconductor oxynitride layer; and bonding a dielectric layer on afront surface of a single crystal semiconductor donor substrate to thepolycrystalline silicon layer of the single crystal semiconductor handlesubstrate to thereby form a bonded structure, wherein the single crystalsemiconductor donor substrate comprises two major, generally parallelsurfaces, one of which is the front surface of the semiconductor donorsubstrate and the other of which is a back surface of the semiconductordonor substrate, a circumferential edge joining the front and backsurfaces of the semiconductor donor substrate, and a central planebetween the front and back surfaces of the semiconductor donorsubstrate.

The invention is further directed to a multilayer structure comprising:a single crystal semiconductor handle substrate comprising two major,generally parallel surfaces, one of which is a front surface of thesingle crystal semiconductor handle substrate and the other of which isa back surface of the single crystal semiconductor handle substrate, acircumferential edge joining the front and back surfaces of the singlecrystal semiconductor handle substrate, a central plane between thefront surface and the back surface of the single crystal semiconductorhandle substrate, and a bulk region between the front and back surfacesof the single crystal semiconductor handle substrate, wherein the singlecrystal semiconductor handle substrate has a minimum bulk regionresistivity of at least about 500 ohm-cm; a textured semiconductor oxidelayer, a textured semiconductor nitride layer, or a texturedsemiconductor oxynitride layer in interfacial contact in interfacialcontact with the front surface of the single crystal semiconductorhandle substrate, wherein the textured semiconductor oxide layer, thetextured semiconductor nitride layer, or the textured semiconductoroxynitride layer comprises holes having sizes between about 5 nanometersand about 1000 nanometers; a polycrystalline silicon layer ininterfacial contact with the textured semiconductor oxide layer, thetextured semiconductor nitride layer, or the textured semiconductoroxynitride layer; a dielectric layer in interfacial contact with thepolycrystalline silicon layer; and a single crystal semiconductor devicelayer in interfacial contact with the dielectric layer, wherein themultilayer structure has wafer bow as measured by at least three pointson the front surface of the semiconductor device layer and/or the backsurface of the single crystal semiconductor handle substrate of lessthan about 80 micrometers.

Other objects and features of this invention will be in part apparentand in part pointed out hereinafter.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a depiction of a silicon-on-insulator wafer comprising a highresistivity substrate and a buried oxide layer.

FIG. 2 is a depiction of a silicon-on-insulator wafer comprising apolycrystalline silicon charge trapping layer between a high resistivitysubstrate and a buried oxide layer.

FIG. 3 is a depiction of a silicon-on-insulator wafer comprising asilicon oxide layer and a polycrystalline silicon charge trapping layerbetween a high resistivity substrate and a buried oxide layer.

FIG. 4 is cross-sectional images of polycrystalline silicon chargetrapping layers formed on monocrystalline silicon handle substrates.

FIG. 5 is a graph depicting the dependence of wafer warp on theconditions of polycrystalline silicon deposition and annealing.

DETAILED DESCRIPTION OF THE EMBODIMENT(S) OF THE INVENTION

According to the present invention, a method is provided for producing acharge trapping layer on a single crystal semiconductor handlesubstrate, e.g., a single crystal semiconductor handle wafer. The singlecrystal semiconductor handle wafer comprising the charge trapping layeris useful in the production of a semiconductor-on-insulator (e.g.,silicon-on-insulator) structure. According to the present invention, thecharge trapping layer in the single crystal semiconductor handle waferis formed at the region near the oxide interface in asemiconductor-on-insulator structure, i.e., near the buried oxide layeror BOX. Advantageously, the method of the present invention provides ahighly defective charge trapping layer that is stable against thermalprocessing, such as subsequent thermal process steps ofsemiconductor-on-insulator substrate and device manufacture.Advantageously, the method of the present invention yields a cleanpolycrystalline silicon charge trapping layer comprising lesscontamination than conventional means of preparing charge trappinglayers. Advantageously, the method of the present invention yields asemiconductor-on-insulator structure comprising a handle substrateprepared by the method of the present invention having reduced warp andbow.

The handle substrate prepared according to the method of the presentinvention is suitable for use in the manufacture of asemiconductor-on-insulator (e.g., silicon-on-insulator) structure. Withreference to FIG. 3, layer transfer is performed by conventionaltechniques thus creating a semiconductor-on-insulator (e.g.,silicon-on-insulator) structure 40 of the present invention comprisingat least the following layers or regions: the handle substrate 42, asemiconductor oxide layer 44, a charge trapping layer 46, a dielectriclayer 48 (e.g., buried oxide) and a single crystal semiconductor devicelayer 50 (e.g., a silicon layer derived from a single crystal silicondonor substrate). In some embodiments, the semiconductor-on-insulator(e.g., silicon-on-insulator) structure 40 of the present inventioncomprises at least the following layers or regions: the handle substrate42, a semiconductor nitride or oxynitride layer 44, a charge trappinglayer 46, a dielectric layer 48 (e.g., buried oxide) and a singlecrystal semiconductor device layer 50 (e.g., a silicon layer derivedfrom a single crystal silicon donor substrate).

The substrates for use in the method and structures of the presentinvention include a semiconductor handle substrate 42, e.g., a singlecrystal semiconductor handle wafer and a semiconductor donor substrate,e.g., a single crystal semiconductor donor wafer. The semiconductordevice layer 50 in a semiconductor-on-insulator composite structure 40is derived from the single crystal semiconductor donor wafer. Thesemiconductor device layer 50 may be transferred onto the semiconductorhandle substrate 42 by wafer thinning techniques such as etching asemiconductor donor substrate or by cleaving a semiconductor donorsubstrate comprising a damage plane. In general, the single crystalsemiconductor handle wafer and single crystal semiconductor donor wafercomprise two major, generally parallel surfaces. One of the parallelsurfaces is a front surface of the substrate, and the other parallelsurface is a back surface of the substrate. The substrates comprise acircumferential edge joining the front and back surfaces, a bulk regionbetween the front and back surfaces, and a central plane between thefront and back surfaces. The substrates additionally comprise animaginary central axis perpendicular to the central plane and a radiallength that extends from the central axis to the circumferential edge.In addition, because semiconductor substrates, e.g., silicon wafers,typically have some total thickness variation (TTV), warp, and bow, themidpoint between every point on the front surface and every point on theback surface may not precisely fall within a plane. As a practicalmatter, however, the TTV, warp, and bow are typically so slight that toa close approximation the midpoints can be said to fall within animaginary central plane which is approximately equidistant between thefront and back surfaces.

Prior to any operation as described herein, the front surface and theback surface of the substrate may be substantially identical. A surfaceis referred to as a “front surface” or a “back surface” merely forconvenience and generally to distinguish the surface upon which theoperations of method of the present invention are performed. In thecontext of the present invention, a “front surface” of a single crystalsemiconductor handle substrate, e.g., a single crystal silicon handlewafer, refers to the major surface of the substrate that becomes aninterior surface of the bonded structure. With reference to FIG. 3, thecharge trapping layer 46 of the present invention is formed ininterfacial contact with a semiconductor oxide layer 44, which is formedon the front surface of the single crystal semiconductor handlesubstrate 42. A “back surface” of a single crystal semiconductor handlesubstrate 42, e.g., a handle wafer, refers to the major surface thatbecomes an exterior surface of the semiconductor-on-insulator compositestructure 40. Similarly, a “front surface” of a single crystalsemiconductor donor substrate, e.g., a single crystal silicon donorwafer, refers to the major surface of the single crystal semiconductordonor substrate that becomes an interior surface of thesemiconductor-on-insulator composite structure 40. The front surface ofa single crystal semiconductor donor substrate often comprises adielectric layer, e.g., a silicon dioxide layer, which forms the buriedoxide (BOX) layer in the final structure. A “back surface” of a singlecrystal semiconductor donor substrate, e.g., a single crystal silicondonor wafer, refers to the major surface that becomes an exteriorsurface of the semiconductor-on-insulator composite structure 40. Uponcompletion of conventional bonding and wafer thinning steps, the singlecrystal semiconductor donor substrate forms the semiconductor devicelayer 50 of the semiconductor-on-insulator (e.g., silicon-on-insulator)composite structure 40.

The semiconductor handle substrate 42 and the device layer 50 maycomprise single crystal semiconductor material. In preferredembodiments, the semiconductor material may be selected from the groupconsisting of silicon, silicon carbide, sapphire, aluminum nitride,silicon germanium, gallium arsenide, gallium nitride, indium phosphide,indium gallium arsenide, germanium, and combinations thereof. Thesemiconductor handle substrate 42 and the device layer 50 may comprisethe same semiconductor material, or they may be different. In viewthereof, semiconductor-on-insulator composite structure 40 may comprise,e.g., silicon-on-insulator, sapphire-on-insulator, aluminumnitride-on-insulator, and other combinations. The single crystalsemiconductor wafers, e.g., the single crystal silicon handle wafer andsingle crystal silicon donor wafer, of the present invention typicallyhave a nominal diameter of at least about 150 mm, at least about 200 mm,at least about 300 mm, or at least about 450 mm. Wafer thicknesses mayvary from about 250 micrometers to about 1500 micrometers, such asbetween about 300 micrometers and about 1000 micrometers, suitablywithin the range of about 500 micrometers to about 1000 micrometers. Insome specific embodiments, the wafer thickness may be about 725micrometers.

In particularly preferred embodiments, the single crystal semiconductorwafers comprise single crystal silicon wafers which have been slicedfrom a single crystal ingot grown in accordance with conventionalCzochralski crystal growing methods or float zone growing methods. Suchmethods, as well as standard silicon slicing, lapping, etching, andpolishing techniques are disclosed, for example, in F. Shimura,Semiconductor Silicon Crystal Technology, Academic Press, 1989, andSilicon Chemical Etching, (J. Grabmaier ed.) Springer-Verlag, N.Y., 1982(incorporated herein by reference). Preferably, the wafers are polishedand cleaned by standard methods known to those skilled in the art. See,for example, W. C. O'Mara et al., Handbook of Semiconductor SiliconTechnology, Noyes Publications. If desired, the wafers can be cleaned,for example, in a standard SC1/SC2 solution. In some embodiments, thesingle crystal silicon wafers of the present invention are singlecrystal silicon wafers which have been sliced from a single crystalingot grown in accordance with conventional Czochralski (“Cz”) crystalgrowing methods, typically having a nominal diameter of at least about150 mm, at least about 200 mm, at least about 300 mm, or at least about450 mm. Preferably, both the single crystal silicon handle wafer and thesingle crystal silicon donor wafer have mirror-polished front surfacefinishes that are free from surface defects, such as scratches, largeparticles, etc. Wafer thickness may vary from about 250 micrometers toabout 1500 micrometers, such as between about 300 micrometers and about1000 micrometers, suitably within the range of about 500 micrometers toabout 1000 micrometers. In some specific embodiments, the waferthickness may be about 725 micrometers.

In some embodiments, the single crystal semiconductor handle substrateand the single crystal semiconductor donor substrate, i.e., singlecrystal semiconductor handle wafer and single crystal semiconductordonor wafer, comprise interstitial oxygen in concentrations that aregenerally achieved by the Czochralski-growth method. In someembodiments, the semiconductor wafers comprise oxygen in a concentrationbetween about 4 PPMA and about 18 PPMA. In some embodiments, thesemiconductor wafers comprise oxygen in a concentration between about 10PPMA and about 35 PPMA. Preferably, the single crystal silicon handlewafer comprises oxygen in a concentration of no greater than about 10ppma. Interstitial oxygen may be measured according to SEMI MF1188-1105.

With reference again to FIG. 3, in some embodiments, the single crystalsemiconductor handle substrate 42, e.g., a single crystal silicon handlewafer, has a relatively high minimum bulk resistivity. High resistivitywafers are generally sliced from single crystal ingots grown by theCzochralski method or float zone method. High resistivity wafers maycomprise electrically active dopants, such as boron (p type), gallium (ptype), phosphorus (n type), antimony (n type), and arsenic (n type), ingenerally very low concentrations. Cz-grown silicon wafers may besubjected to a thermal anneal at a temperature ranging from about 600°C. to about 1000° C. in order to annihilate thermal donors caused byoxygen that are incorporated during crystal growth. In some embodiments,the single crystal semiconductor handle wafer has a minimum bulkresistivity of at least 100 Ohm-cm, or even at least about 500 Ohm-cm,such as between about 100 Ohm-cm and about 100,000 Ohm-cm, or betweenabout 500 Ohm-cm and about 100,000 Ohm-cm, or between about 1000 Ohm-cmand about 100,000 Ohm-cm, or between about 500 Ohm-cm and about 10,000Ohm-cm, or between about 750 Ohm-cm and about 10,000 Ohm-cm, betweenabout 1000 Ohm-cm and about 10,000 Ohm-cm, between about 2000 Ohm-cm andabout 10,000 Ohm-cm, between about 3000 Ohm-cm and about 10,000 Ohm-cm,or between about 3000 Ohm-cm and about 5,000 Ohm-cm. Methods forpreparing high resistivity wafers are known in the art, and such highresistivity wafers may be obtained from commercial suppliers, such asSunEdison Semiconductor Ltd. (St. Peters, Mo.; formerly MEMC ElectronicMaterials, Inc.).

In some embodiments, the high resistivity single crystal semiconductorhandle substrate 42 comprises a p-type or an n-type dopant. Suitabledopants include boron (p type), gallium (p type), phosphorus (n type),antimony (n type), and arsenic (n type). In some embodiments, the singlecrystal semiconductor handle substrate comprises a p-type dopant. Insome embodiments, the single crystal semiconductor handle substrate is asingle crystal silicon wafer comprising a p-type dopant, such as boron.The boron dopant is present in a relatively low concentration, e.g.,less than 1×10¹⁴ atoms/cm³, preferably less than 1×10¹³ atoms/cm³, so asto obtain high resistivity handle substrates.

In some embodiments, the single crystal semiconductor handle substrate42, e.g., a single crystal silicon handle wafer, has a relatively lowminimum bulk resistivity, such as below about 100 ohm-cm, below about 50ohm-cm, below about 1 ohm-cm, below about 0.1 ohm-cm, or even belowabout 0.01 ohm-cm. In some preferred embodiments, the single crystalsemiconductor handle substrate 42 has a relatively low minimum bulkresistivity, such as below about 100 ohm-cm, or between about 1 ohm-cmand about 100 ohm-cm. Low resistivity wafers may comprise electricallyactive dopants, such as boron (p type), gallium (p type), phosphorus (ntype), antimony (n type), and arsenic (n type).

In some embodiments, the single crystal semiconductor handle substrate42 surface could be intentionally damaged by a sound blasting process orby a caustic etch.

According to the method of the present invention, the front surface ofthe single crystal semiconductor handle substrate 42 may be oxidized,such as by exposure to an oxidizing medium. Oxidation of the singlecrystal semiconductor handle substrate 42 forms a semiconductor oxidelayer 44 on the front surface of the handle substrate 42. In someembodiments, the front surface of the single crystal semiconductorhandle substrate 42 may comprise a semiconductor nitride or oxynitridelayer. In some embodiments, the single crystal semiconductor handlesubstrate 42 may be exposed to air or ozone. In some embodiments, thesingle crystal semiconductor handle substrate 42 may be exposed to anaqueous solution comprising an oxidizing agent. An example of such anaqueous solution is an SC1 solution. In some embodiments, the singlecrystal semiconductor handle substrate 42 may be oxidized by thermaloxidation (in which some portion of the single crystal semiconductormaterial will be consumed) and/or CVD oxide deposition and/or by atomiclayer deposition prior to deposition of the charge trapping layer.

In some embodiments, the front surface of the single crystalsemiconductor handle substrate 42 may be subjected to a process, e.g.,an oxidation process, to thereby grow a dielectric layer, such as asemiconductor oxide layer, a semiconductor nitride layer, or asemiconductor oxynitride layer. In some embodiments, the dielectriclayer comprises silicon dioxide, which may be formed by oxidizing thefront surface of the silicon handle substrate. This may be accomplishedby thermal oxidation (in which some portion of the depositedsemiconductor material film will be consumed) and/or CVD oxidedeposition and/or atomic layer deposition. In some embodiments, thesemiconductor handle substrate may be thermally oxidized in a furnacesuch as an ASM A400. The temperature may range from 750° C. to 1100° C.in an oxidizing ambient. The oxidizing ambient atmosphere can be amixture of inert gas, such as Ar or N₂, and O₂. The oxygen content mayvary from 1 to 10 percent, or higher. In some embodiments, the oxidizingambient atmosphere may be up to 100% oxygen (a “dry oxidation”). In someembodiments, the oxidizing ambient atmosphere may be oxygen and ammonia.In some embodiments, the ambient atmosphere may comprise a mixture ofinert gas, such as Ar or N₂, and oxidizing gases, such as O₂ and watervapor (a “wet oxidation”). In some embodiments, the ambient atmospheremay comprise a mixture of inert gas, such as Ar or N₂, and oxidizinggas, such as O₂ and water vapor (a “wet oxidation”), and a nitridinggas, such as ammonia. In some embodiments, the ambient atmosphere maycomprise a mixture of inert gas, such as Ar or N₂, and a nitriding gas,such as ammonia. In an exemplary embodiment, semiconductor handle wafersmay be loaded into a vertical furnace, such as an A400. The temperatureis ramped to the oxidizing temperature with a mixture of N₂ and O₂. Atthe desired temperature water vapor is introduced into the gas flow.After the desired oxide thickness has been obtained, the water vapor andO₂ are turned off and the furnace temperature is reduced and wafers areunloaded from the furnace.

In some embodiments, the handle substrate 42 may be oxidized by exposureto an aqueous solution comprising an oxidizing agent, such as an SC1solution or an SC2 solution. In some embodiments, the SC1 solutioncomprises 5 parts deioinized water, 1 part aqueous NH₄OH (ammoniumhydroxide, 29% by weight of NH₃), and 1 part of aqueous H₂O₂(hydrogenperoxide, 30%). In some embodiments, the handle substrate may beoxidized by exposure to an aqueous solution comprising an oxidizingagent, such as an SC2 solution. In some embodiments, the SC2 solutioncomprises 5 parts deioinized water, 1 part aqueous HCl (hydrochloricacid, 39% by weight), and 1 part of aqueous H₂O₂(hydrogen peroxide,30%).

In some embodiments, the handle substrate 42 is oxidized to provide asemiconductor oxide layer 44 in interfacial contact with the frontsurface layer of the substrate 42 having a thickness between about 0.1nanometers and about 25 nanometers, such as between about 0.5 nanometersand about 5 nanometers, or between about 1 nanometer and about 5nanometers.

After oxidation of the front surface of the single crystal semiconductorhandle substrate 42 to form a semiconductor oxide layer 44 on the frontsurface of the handle substrate 42, the single crystal semiconductorhandle substrate 42 comprising the semiconductor oxide layer 44 on thefront surface thereof may be exposed to an ambient atmosphere comprisingreducing agents and/or etching agents. Exposure to the ambientatmosphere comprising reducing agents and/or etching agentsadvantageously cleans the oxide layer on the substrate and texturizesthe semiconductor oxide layer for subsequent polycrystalline silicondeposition. Wafer handling in the clean room may cause contaminants,such as organic contaminants and boron, aluminum, phosphorus, etc., todeposit on the surfaces of the handle substrate. The contaminants eitherdisrupt the nucleation process of polycrystalline silicon film or becomeundesired dopants in Silicon that changes the substrate andpolycrystalline silicon film resistivity, resulting in enhancedradiofrequency signal distortion and power loss. The ambient atmospherecomprising reducing agents and/or etching agents may clean thesecontaminants. According to the present invention, a reducing agent suchas hydrogen reacts with common clean room contaminants such as Boronoxide, Aluminum oxide, etc., while an etching gas such as chlorine orhydrogen chloride reacts with aluminum, boron, and phosphorus to formvolatile chloride products that are carried away from the siliconsurface by the hydrogen gas. In the presence of silicon oxide, thecarbon atoms in the organic contaminants replace silicon atoms and formcarbon monoxide which is purged off the silicon surface by hydrogencarrier gas. Therefore, the bake/etch step prior to polycrystallinesilicon deposition is advantageous for obtaining a pure andhigh-efficiency charge trapping layer. Additionally, the bake/etchprocess opens holes in the oxide layer to form a textured oxidestructure and thus exposes the silicon surface to the silicon precursorduring deposition of the polycrystalline silicon charge trapping layer.The density and size of the holes in the textured oxide can be wellcontrolled by the temperature, time, and gas flows in the bake/etchstep. Typically, the size of the holes can be controlled in the range ofbetween about 5 nanometers and about 1000 nanometers, such as betweenabout 5 nanometers and about 500 nanometers, or between about 5nanometers and about 200 nanometers, which enables the engineering ofthe polycrystalline silicon grain size as well as the film stress. SeeFIG. 4, which shows an opening of ˜40 nm in the oxide that providesnucleation site for the polysilicon charge trapping layer. The texturedoxide structure has to be well controlled so that a uniform density ofholes is achieved across the wafer surface without losing the wholeoxide layer. The residual oxide is critical to the thermal stability ofthe polycrystalline silicon charge trapping layer. In the subsequentthermal processes in SOI substrate and device fabrication, thepolycrystalline silicon layer may through recrystallization that isfacilitated by the direct contact of polycrystalline grains and themonocrystalline substrate. The residual oxide at the polysilicon andsubstrate interface effectively blocks the recrystallization process andprevents the polycrystalline silicon layer from turning intomonocrystalline silicon that has no charge trapping function.

The cleaning/anneal step is advantageously performed in the samechamber, e.g., a CVD reaction chamber, in which the polycrystallinesilicon charge trapping layer is deposited. The reducing atmosphere mayadditionally comprise an etchant to further enhance the wafer clean.Accordingly, the ambient atmosphere for wafer cleaning may comprisehydrogen, hydrogen chloride, chlorine, or any combination of hydrogen,hydrogen chloride, and chlorine. In some embodiments, the ambientatmosphere for wafer cleaning may comprise hydrogen and hydrogenchloride. In some embodiments, the ambient atmosphere for wafer cleaningmay comprise hydrogen and chlorine. Additionally, the wafer clean may beperformed at elevated temperature, such as greater than about 850° C.,such as between about 850° C. and about 1100° C., or between about 850°C. and about 1000° C., preferably between 900° C. and 1000° C. Thepressure inside the chamber may be atmospheric pressure or at a reducetemperature, such as between about 1 Torr and about 760 Torr, such asbetween about 1 Torr and about 400 Torr. At the desired temperature forcleaning, the wafer may be exposed to the ambient atmosphere comprisinghydrogen, hydrogen chloride, chlorine, or any combination of hydrogen,hydrogen chloride, and chlorine for a duration between about 1 secondand about 300 seconds, such as between about 5 seconds and about 60seconds, or between about 10 seconds and about 40 seconds.

After formation of the semiconductor oxide layer 44 on the front surfaceof the single crystal semiconductor handle substrate 42 and waferannealing and texturing, a polycrystalline silicon charge trapping layer46 is next deposited in interfacial contact with the semiconductor oxidelayer 44. In some embodiments, semiconductor material is deposited ontothe semiconductor oxide layer 44 on the front surface of the singlecrystal semiconductor handle substrate 42. Semiconductor materialsuitable for use in forming a charge trapping layer 46 in asemiconductor-on-insulator device 40 is capable of forming a highlydefective layer in the fabricated device. In some embodiments, thecharge trapping layer comprises polycrystalline silicon. Polycrystallinematerial denotes a material comprising small crystals having randomcrystal orientations. Polycrystalline grains may be as small in size asabout 20 nanometers, and the grain size generally ranges from betweenabout 20 nanometers and about 1 micrometer, such as between about 0.3micrometer and about 1 micrometer. According to the method of thepresent invention, the smaller the crystal grain size of polycrystallinematerial deposited the higher the defectivity in the charge trappinglayer. The resistivity of the polycrystalline silicon charge trappinglayer may be at least 100 Ohm-cm, at least about 500 Ohm-cm, at leastabout 1000 Ohm-cm, or even at least about 3000 Ohm-cm, such as betweenabout 100 Ohm-cm and about 100,000 Ohm-cm, or between about 500 Ohm-cmand about 100,000 Ohm-cm, or between about 1000 Ohm-cm and about 100,000Ohm-cm, or between about 500 Ohm-cm and about 10,000 Ohm-cm, or betweenabout 750 Ohm-cm and about 10,000 Ohm-cm, between about 1000 Ohm-cm andabout 10,000 Ohm-cm, between about 2000 Ohm-cm and about 10,000 Ohm-cm,between about 3000 Ohm-cm and about 10,000 Ohm-cm, or between about 3000Ohm cm and about 8,000 Ohm-cm. Polycrystalline silicon may be depositedusing metalorganic chemical vapor deposition (MOCVD), physical vapordeposition (PVD), chemical vapor deposition (CVD), low pressure chemicalvapor deposition (LPCVD), plasma enhanced chemical vapor deposition(PECVD), or molecular beam epitaxy (MBE). In some embodiments,polycrystalline silicon is deposited by chemical vapor deposition. Insome embodiments, polycrystalline silicon is deposited at elevatedtemperatures. In some embodiments, after the polycrystalline silicon isdeposited, the handle substrate is subjected to a high temperatureanneal. In some embodiments, a portion of polycrystalline silicon isdeposited to thereby deposit a polycrystalline silicon seed layer havinga thickness less than the final thickness of the charged trapping layer.The handle substrate comprising the polycrystalline seed layer issubjected to a high temperature anneal, which is followed by depositionof the rest of the charge trapping layer. In some embodiments, the fullydeposited polycrystalline silicon charge trapping layer is subjected toa high temperature anneal in order to reduce film stress to a rangebetween about 0 MPa and about 500 MPa, such as between about 0 MPa andabout 100 MPa. The semiconductor oxide layer 44 contributes to thepolycrystallinity of the charge trapping layer 46. Accordingly, if thesemiconductor oxide layer 44 is not formed prior to deposition of thecharge trapping layer 46, the deposited semiconductor material mayassume the crystallinity of the underlying substrate 42, which is notpreferred for a charge trapping layer.

In some embodiments, the semiconductor oxide layer is present on thehandle substrate in order to form a polycrystalline silicon layerinstead of epitaxial silicon layer in the charge trapping layerdeposition step. The nucleation of polycrystalline silicon layer on thesemiconductor oxide layer is realized by preferential etching of thesemiconductor oxide layer in an ambient atmosphere comprising one ormore of H₂, HCl, and, optionally, a silicon precursor. The etching andpolycrystalline silicon layer deposition may occur sequentially in whichthe etching step occurs first, or simultaneously. Exemplary siliconprecursors for inclusion in the etching ambient atmosphere or theambient atmosphere for polycrystalline silicon deposition may beselected from among methyl silane, silicon tetrahydride (silane),trisilane, disilane, pentasilane, neopentasilane, tetrasilane,dichlorosilane (SiH₂Cl₂), trichlorosilane (SiHCl₃), silicontetrachloride (SiCl₄), among others. Polycrystalline silicon growthstarts from openings in the semiconductor oxide layer and adjacentnuclei merge into a solid film upon growth. By controlling thesemiconductor oxide layer thickness and properties, like porosity,density, and chemical composition, the texture of the polycrystallinesilicon layer can be engineered to meet different applications.

The material for deposition onto the front surface of the single crystalsemiconductor handle wafer to thereby form the charge trapping layer maybe deposited by metalorganic chemical vapor deposition (MOCVD), physicalvapor deposition (PVD), chemical vapor deposition (CVD), low pressurechemical vapor deposition (LPCVD), plasma enhanced chemical vapordeposition (PECVD), or molecular beam epitaxy (MBE). In preferredembodiments, polycrystalline silicon is deposited by chemical vapordeposition. Silicon precursors for CVD include methyl silane, silicontetrahydride (silane), trisilane, disilane, pentasilane, neopentasilane,tetrasilane, dichlorosilane (SiH₂Cl₂), trichlorosilane (SiHCl₃), silicontetrachloride (SiCl₄), among others. In some preferred embodiments, thesilicon precursor is selected from among silane, dichlorosilane(SiH₂Cl₂), and trichlorosilane (SiHCl₃). For example, polycrystallinesilicon may be deposited onto the surface oxidation layer by CVD ofsilane, dichlorosilane (SiH₂Cl₂), and trichlorosilane (SiHCl₃) in atemperature greater than about 850° C., such as between about 850° C.and about 1100° C., or between about 850° C. and about 1000° C. The hightemperature contributes, among other advantages, high growth rate,thereby contributing to throughput and cost reduction. CVD depositionrates may range be at least about 0.1 micrometer/minute, such as betweenabout 0.1 micrometer/minute to about 10 micrometers/minute, or betweenabout 0.1 micrometer/minute to about 2 micrometers/minute. Deposition ofthe polycrystalline silicon layer may continue until the layer has athickness of at least about 0.1 micrometer, such as between about 0.1micrometer and about 50 micrometers, such as between about 0.1micrometer and about 20 micrometers, between about 0.1 micrometer andabout 10 micrometers, between about 0.5 micrometer and about 5micrometers, or between about 0.5 micrometer and about 3 micrometers,such as between about 1 micrometer and about 2 micrometers or betweenabout 2 micrometers and about 5 micrometers. Deposition may occur at apressure between about 1 Torr and about 760 Torr, such as between about1 Torr and about 400 Torr.

In some embodiments, deposition of the polycrystalline silicon layer bychemical vapor deposition is interrupted after deposition of apolycrystalline silicon seed layer. The polycrystalline silicon seedlayer may have a thickness less than the overall desired thickness ofthe final polycrystalline silicon charge trapping layer. Accordingly,the polycrystalline seed layer may be deposited to a thickness of lessthan 20 micrometers, less than 10 micrometers, less than 5 micrometers,less than 3 micrometers, less than 2 micrometers, or less than 1micrometer, or less than 0.5 micrometer, such as between about 50nanometers and about 20 micrometers, or between about 50 nanometers andabout 10 micrometers, or between about 50 nanometers and about 5micrometers, or between about 50 nanometers and about 3 micrometers, orbetween about 50 nanometers and about 2 micrometers, or between about 50nanometers and about 1 micrometers, or between about 50 nanometers andabout 500 nanometers, or between about 50 nanometers and about 200nanometers. The thickness of the seed layer is set by the size of thepolysilicon nuclei. To achieve effective stress release, the seed layerneeds to cover the substrate surface while leaving voids smaller than 50nm, which enables the access of H₂ to the interface between thepolysilicon seed layer and oxide. H₂ reduces the interfacial oxide andpromotes the diffusion of the atoms at the grain boundaries of thepolysilicon seed layer to the substrate and thus releases the filmstress. When the seed layer is thick enough to completely prevent H₂access to the interfacial oxide, the subsequent annealing process is notable to release the film stress effectively. On the other hand, when theseed layer is not continuous and the opening area between two adjacentnuclei is wider than 50 nm, large nuclei are formed after the oxidelayer is removed during the seed annealing process. The large nucleiwill grow into large grains (i.e., diameter >1 um) at the end ofpolysilicon deposition, which reduces the trapping efficiency.Deposition may be interrupted by ceasing the flow of silicon precursorsinto the CVD chamber. After interruption of the deposition ofpolycrystalline silicon, the handle substrate comprising thepolycrystalline seed layer may be annealed. Annealing thepolycrystalline seed layer contributes to desirable charge trappinglayer properties, such as obtaining a clean surface, a high purity film,a high resistivity film, desired nuclei size and uniformity, andreduction of residual film stress. In some embodiments, thepolycrystalline silicon seed layer is subjected to a high temperatureanneal in order to reduce film stress to a range between about 0 MPa andabout 500 MPa, such as between about 0 MPa and about 100 MPa. Thepolycrystalline seed layer is annealed at a temperature greater thanabout 1000° C., such as between about 1000° C. and about 1200° C., orbetween about 1000° C. and about 1100° C. The seed layer may be annealedfor a duration between about 1 second and about 300 seconds, such asbetween about 5 seconds and about 60 seconds, or between about 10seconds and about 40 seconds. The ambient atmosphere for anneal maycomprise hydrogen, hydrogen chloride, chlorine, or any combination ofhydrogen, hydrogen chloride, and chlorine. The annealing step can beperformed at reduced pressure or atmospheric pressure, such as betweenabout 1 Torr and about 760 Torr, or between about 10 Torr and about 760Torr. The grain size and the stress of the polycrystalline silicon filmis controlled by the annealing temperature, duration, and gas flow.After the appropriate anneal duration, deposition by chemical vapordeposition of the polycrystalline silicon layer is resumed after coolingthe single crystal semiconductor handle substrate to a temperaturebetween about 850° C. and about 1000° C.

In some embodiments, the handle substrate comprising the polycrystallinesilicon layer is annealed after deposition is complete. Annealing thepolycrystalline seed layer contributes to desirable charge trappinglayer properties, such as obtaining a clean surface, a high purity film,a high resistivity film, desired nuclei size and uniformity, andreduction of residual film stress. In some embodiments, the fullydeposited polycrystalline silicon charge trapping layer is subjected toa high temperature anneal in order to reduce film stress to a rangebetween about 0 MPa and about 500 MPa, such as between about 0 MPa andabout 100 MPa. The handle substrate comprising the depositedpolycrystalline silicon layer is at a temperature greater than about1000° C., such as between about 1000° C. and about 1100° C. The handlesubstrate comprising the polycrystalline silicon charge trapping layermay be annealed for a duration between about 1 second and about 300seconds, such as between about 5 seconds and about 60 seconds, orbetween about 10 seconds and about 40 seconds. The ambient atmospherefor anneal may comprise hydrogen, hydrogen chloride, chlorine, or anycombination of hydrogen, hydrogen chloride, and chlorine. After theappropriate anneal duration, the CVD chamber may be cooled to atemperature safe for removal single crystal semiconductor handlesubstrate.

In some embodiments, an oxide film may be formed on top of the depositedcharge trapping layer. This may be accomplished by means known in theart, such as thermal oxidation (in which some portion of the depositedsemiconductor material film will be consumed) and/or CVD oxidedeposition. In some embodiments, the charge trapping layer may bethermally oxidized (in which some portion of the deposited semiconductormaterial film will be consumed) or the silicon dioxide film may be grownby CVD oxide deposition. In some embodiments, the charge trapping layerdeposited on the front surface of the single crystal semiconductorhandle substrate may be thermally oxidized in a furnace such as an ASMA400. The temperature may range from 750° C. to 1200° C. in an oxidizingambient. The oxidizing ambient atmosphere can be a mixture of inert gas,such as Ar or N₂, and O₂. The oxygen content may vary from 1 to 10percent, or higher. In some embodiments, the oxidizing ambientatmosphere may be up to 100% (a “dry oxidation”). In an exemplaryembodiment, semiconductor handle wafers may be loaded into a verticalfurnace, such as an A400. The temperature is ramped to the oxidizingtemperature with a mixture of N₂ and O₂. After the desired oxidethickness has been obtained, the O₂ is turned off and the furnacetemperature is reduced and wafers are unloaded from the furnace. Inorder to incorporate nitrogen in the interfacial layer to depositsilicon nitride or silicon oxynitride, the atmosphere may comprisenitrogen alone or a combination of oxygen and nitrogen, and thetemperature may be increased to a temperature between 1100° C. and 1400°C. An alternative nitrogen source is ammonia. In some embodiments, thecharge trapping layer may be oxidized for a duration sufficient toprovide an oxide layer of at least about 0.01 micrometers thick, or atleast about 0.05 micrometers thick, such as between about 0.05micrometers and about 4 micrometers, such as between about 0.1micrometers and about 2 micrometers, or between about 0.2 micrometersand about 0.4 micrometers.

After deposition of the charge trapping layer, and optional oxidation,wafer cleaning and polishing is optional. In some embodiments, thedeposited polycrystalline silicon charge trapping layer has a surfaceroughness as measured by RMS_(2×2 um2) on the order of 50 nanometers. Ifdesired, the wafers can be cleaned, for example, in a standard SC1/SC2solution. Additionally, the wafers, particularly, the optional silicondioxide layer on the charge trapping layer, may be subjected to chemicalmechanical polishing (CMP) to reduce the surface roughness, preferablyto the level of RMS_(2×2 um2) is less than about 5 angstroms, such asbetween about 1 angstrom and about 2 angstroms, wherein root meansquared—

${R_{q} = \sqrt{\frac{1}{n}{\sum\limits_{i = 1}^{n}y_{i}^{2}}}},$

the roughness profile contains ordered, equally spaced points along thetrace, and y_(i) is the vertical distance from the mean line to the datapoint. At a surface roughness of preferably less than 2 angstroms, thesurface is ready for bonding or optional oxidation.

The single crystal semiconductor handle wafer prepared according to themethod described herein to comprise a charge trapping layer, and,optionally, an oxide film, is next bonded a single crystal semiconductordonor substrate, e.g., a single crystal semiconductor donor wafer, whichis prepared according to conventional layer transfer methods. That is,the single crystal semiconductor donor wafer may be subjected tostandard process steps including oxidation, implant, and post implantcleaning. Accordingly, a single crystal semiconductor donor substrate,such as a single crystal semiconductor wafer of a material that isconventionally used in preparation of multilayer semiconductorstructures, e.g., a single crystal silicon donor wafer, that has beenetched and polished and optionally oxidized, is subjected to ionimplantation to form a damage layer in the donor substrate.

In some embodiments, the front surface of the single crystalsemiconductor donor substrate may be thermally oxidized (in which someportion of the semiconductor material will be consumed) or the silicondioxide film may be grown by CVD oxide deposition. In some embodiments,the single crystal semiconductor donor substrate, e.g., a single crystalsilicon donor wafer, may be thermally oxidized in a furnace such as anASM A400. The temperature may range from 750° C. to 1200° C. in anoxidizing ambient. The oxidizing ambient atmosphere can be a mixture ofinert gas, such as Ar or N₂, and O₂. The oxygen content may vary from 1to 10 percent, or higher. In some embodiments, the oxidizing ambientatmosphere may be up to 100% (a “dry oxidation”). In an exemplaryembodiment, semiconductor donor wafers may be loaded into a verticalfurnace, such as an A400. The temperature is ramped to the oxidizingtemperature with a mixture of N₂ and O₂. After the desired oxidethickness has been obtained, the O₂ is turned off and the furnacetemperature is reduced and wafers are unloaded from the furnace. In someembodiments, the donor substrates are oxidized to provide an oxide layeron the front surface layer of at least about 1 nanometer thick, such asbetween about 0.01 micrometers and about 10 micrometers, such as betweenabout 0.01 micrometers and about 2 micrometers, or between about 0.1micrometers and about 1 micrometers. The oxidation process additionallyoxidizes the back surface of the donor substrate, which advantageouslyreduces warp and bow potentially caused by the different coefficients ofthermal expansion of silicon and silicon dioxide.

Ion implantation may be carried out in a commercially availableinstrument, such as an Applied Materials Quantum H. Implanted ionsinclude He, H, H₂, or combinations thereof. Ion implantation is carriedout at a density and duration sufficient to form a damage layer in thesemiconductor donor substrate. Implant density may range from about 10¹²ions/cm² to about 10¹⁷ ions/cm², such as from about 10¹⁴ ions/cm² toabout 10¹⁷ ions/cm². Implant energies may range from about 1 keV toabout 3,000 keV, such as from about 10 keV to about 3,000 keV. In someembodiments it may be desirable to subject the single crystalsemiconductor donor wafers, e.g., single crystal silicon donor wafers,to a clean after the implant. In some preferred embodiments, the cleancould include a Piranha clean followed by a DI water rinse and SC1/SC2cleans.

In some embodiments of the present invention, the single crystalsemiconductor donor substrate having an ion implant region thereinformed by helium ion and/or hydrogen ion implant is annealed at atemperature sufficient to form a thermally activated cleave plane in thesingle crystal semiconductor donor substrate. An example of a suitabletool might be a simple Box furnace, such as a Blue M model. In somepreferred embodiments, the ion implanted single crystal semiconductordonor substrate is annealed at a temperature of from about 200° C. toabout 350° C., from about 225° C. to about 325° C., preferably about300° C. Thermal annealing may occur for a duration of from about 2 hoursto about 10 hours, such as from about 2 hours to about 8 hours. Thermalannealing within these temperatures ranges is sufficient to form athermally activated cleave plane. After the thermal anneal to activatethe cleave plane, the single crystal semiconductor donor substratesurface is preferably cleaned.

In some embodiments, the ion-implanted and optionally cleaned andoptionally annealed single crystal semiconductor donor substrate issubjected to oxygen plasma and/or nitrogen plasma surface activation. Insome embodiments, the oxygen plasma surface activation tool is acommercially available tool, such as those available from EV Group, suchas EVG® 810LT Low Temp Plasma Activation System. The ion-implanted andoptionally cleaned single crystal semiconductor donor wafer is loadedinto the chamber. The chamber is evacuated and backfilled with O₂ to apressure less than atmospheric to thereby create the plasma. The singlecrystal semiconductor donor wafer is exposed to this plasma for thedesired time, which may range from about 1 second to about 120 seconds.Oxygen plasma surface oxidation is performed in order to render thefront surface of the single crystal semiconductor donor substratehydrophilic and amenable to bonding to a single crystal semiconductorhandle substrate prepared according to the method described above.

The hydrophilic front surface layer of the single crystal semiconductordonor substrate and the front surface of the single crystalsemiconductor handle substrate, which is optionally oxidized, are nextbrought into intimate contact to thereby form a bonded structure. Sincethe mechanical bond is relatively weak, the bonded structure is furtherannealed to solidify the bond between the donor wafer and the handlewafer. In some embodiments of the present invention, the bondedstructure is annealed at a temperature sufficient to form a thermallyactivated cleave plane in the single crystal semiconductor donorsubstrate. An example of a suitable tool might be a simple Box furnace,such as a Blue M model. In some preferred embodiments, the bondedstructure is annealed at a temperature of from about 200° C. to about350° C., from about 225° C. to about 325° C., preferably about 300° C.Thermal annealing may occur for a duration of from about 0.5 hours toabout 10 hours, preferably a duration of about 2 hours. Thermalannealing within these temperatures ranges is sufficient to form athermally activated cleave plane. After the thermal anneal to activatethe cleave plane, the bonded structure may be cleaved.

After the thermal anneal, the bond between the single crystalsemiconductor donor substrate and the single crystal semiconductorhandle substrate is strong enough to initiate layer transfer viacleaving the bonded structure at the cleave plane. Cleaving may occuraccording to techniques known in the art. In some embodiments, thebonded structure may be placed in a conventional cleave station affixedto stationary suction cups on one side and affixed by additional suctioncups on a hinged arm on the other side. A crack is initiated near thesuction cup attachment and the movable arm pivots about the hingecleaving the wafer apart. Cleaving removes a portion of thesemiconductor donor wafer, thereby leaving a semiconductor device layer,preferably a silicon device layer, on the semiconductor-on-insulatorcomposite structure.

After cleaving, the cleaved structure may be subjected to a hightemperature anneal in order to further strengthen the bond between thetransferred device layer and the single crystal semiconductor handlesubstrate. An example of a suitable tool might be a vertical furnace,such as an ASM A400. In some preferred embodiments, the bonded structureis annealed at a temperature of from about 1000° C. to about 1200° C.,preferably at about 1000° C. Thermal annealing may occur for a durationof from about 0.5 hours to about 8 hours, preferably a duration of about4 hours. Thermal annealing within these temperatures ranges issufficient to strengthen the bond between the transferred device layerand the single crystal semiconductor handle substrate.

After the cleave and high temperature anneal, the bonded structure maybe subjected to a cleaning process designed to remove thin thermal oxideand clean particulates from the surface. In some embodiments, the singlecrystal semiconductor donor wafer may be brought to the desiredthickness and smoothness by subjecting to a vapor phase HCl etch processin a horizontal flow single wafer epitaxial reactor using H₂ as acarrier gas. In some embodiments, the thickness of the device layer maybe between about 1 nanometer and about 100 micrometers, such as betweenabout 10 nanometers and about 50 micrometers. In some embodiments, anepitaxial layer may be deposited on the transferred device layer. Thefinished SOI wafer comprises the semiconductor handle substrate, thecharge trapping layer, the dielectric layer (e.g., buried oxide layer),and the semiconductor device layer, may then be subjected to end of linemetrology inspections and cleaned a final time using typical SC1-SC2process.

According to the present invention, SOI wafers are obtained with thedeposited semiconductor material charge trapping layer embeddedunderneath of BOX. With reference to FIG. 3, layer transfer is performedby conventional techniques thus creating a semiconductor-on-insulator(e.g., silicon-on-insulator) structure 40 comprising at least thefollowing layers or regions: the handle substrate 42, a semiconductoroxide layer 44, a charge trapping layer 46, a dielectric layer 48 (e.g.,buried oxide) and a single crystal semiconductor device layer 50 (e.g.,a silicon layer derived from a single crystal silicon donor substrate).In some embodiments, semiconductor-on-insulator (e.g.,silicon-on-insulator) structure 40 is prepared comprising at least thefollowing layers or regions: the handle substrate 42, a semiconductornitride or oxynitride layer 44, a charge trapping layer 46, a dielectriclayer 48 (e.g., buried oxide) and a single crystal semiconductor devicelayer 50 (e.g., a silicon layer derived from a single crystal silicondonor substrate). As shown by the images of FIG. 4 and the graph of FIG.5, the deposition method of the present invention advantageouslyproduces wafers comprising polycrystalline silicon charge trappinglayers of reduce contamination and semiconductor-on-insulator (e.g.,silicon-on-insulator) structures of reduced wafer bow. Wafer bow may bemeasured by the variance of at least three points on the front surfaceof the semiconductor device layer and/or the back surface of the singlecrystal semiconductor handle substrate. According to the presentinvention, SOI structures may comprise wafer bow of less than about 80micrometers, less than about 60 micrometers, or less than about 20micrometers.

Having described the invention in detail, it will be apparent thatmodifications and variations are possible without departing from thescope of the invention defined in the appended claims.

EXAMPLES

The following non-limiting examples are provided to further illustratethe present invention.

Example 1

In one example, a silicon wafer sliced from an ingot grown by theCzochralski method is cleaned using SC1 solution. The cleaning issufficient to obtain a chemical silicon oxide layer having a thicknessbetween 0.8 nm and 2.0 nm on the front surface of the silicon wafer. Thewafer is next loaded into a chemical vapor deposition chamber. The waferis heated up to a temperature from 850° C. to 1000° C. Once thetemperature set point is reached, the wafer is baked at the sametemperature for between 5 seconds to 60 seconds, preferably between 10seconds to 40 seconds. The ambient atmosphere in the CVD chamber iseither H₂ or a combination of H₂ and an etching gas such as HCl or Cl₂.The reducing atmosphere, which optionally comprises etching gas, isintroduced to the chamber to removal wafer surface contamination. Whenthe bake is complete, the wafer is subject to chemical vapor depositionof polycrystalline silicon at the same temperature as the reducingatmosphere bake. The silicon precursors for chemical vapor deposition ofpolycrystalline silicon include trichlorosilane, dichlorosilane, silane,and their derivatives. The chemical vapor deposition of polycrystallinesilicon occurs under either atmospheric pressure or reduced pressure.The deposition rate ranges from 0.1 um/min to 2 um/min. After thedesired thickness of the polycrystalline layer is achieved, which may bebetween 0.5 micrometer and 3 micrometers, the wafer is cooled down to asafe temperature for unloading, which is between 700° C. to 900° C.

Example 2

In one example, a silicon wafer sliced from an ingot grown by theCzochralski method is cleaned using SC1 solution. The cleaning issufficient to obtain a chemical silicon oxide layer having a thicknessbetween 0.8 nm and 2.0 nm on the front surface of the silicon wafer. Thewafer is next loaded into a chemical vapor deposition chamber. The waferis heated up to a temperature from 850° C. to 1000° C. Once thetemperature set point is reached, the wafer is baked at the sametemperature for between 5 seconds to 60 seconds, preferably between 10seconds to 40 seconds. The ambient atmosphere in the CVD chamber iseither H₂ or a combination of H₂ and an etching gas such as HCl or Cl₂.The reducing atmosphere, which optionally comprises etching gas, isintroduced to the chamber to removal wafer surface contamination. Whenthe bake is complete, the wafer is subject to chemical vapor depositionof polycrystalline silicon at the same temperature as the reducingatmosphere bake. The silicon precursors for chemical vapor deposition ofpolycrystalline silicon include trichlorosilane, dichlorosilane, silane,and their derivatives. The chemical vapor deposition of polycrystallinesilicon occurs under either atmospheric pressure or reduced pressure.The deposition rate ranges from 0.1 um/min to 2 um/min. After thepolycrystalline silicon is deposited to the desired thickness, the wafertemperature is ramped up to a higher temperature than the depositiontemperature to anneal out the residue film stress. The temperature foreffective film stress release is 1000° C. or above, such as 1050° C. or1100° C. The anneal soak time is 10 seconds or longer. When annealing iscomplete, the wafer is cooled down to a safe temperature for unloading.See FIG. 5, which is a graph depicting the dependence of wafer warp onthe conditions of polycrystalline silicon deposition and annealing. Theresidual film stress in the polysilicon film can be controlled from 0 to100 MPa by varying the conditions of oxide bake, deposition temperatureand rate, and annealing after the deposition to meet the wafer bow andwarp specifications (typically <60 um for both 200 mm and 300 mmwafers). For a given film stress, wafer bow and warp increases inproportion to the film thickness. Therefore, the disclosed polysiliconprocess enables the growth of thick polysilicon films up to tens ofmicrometers. After the desired thickness of the polycrystalline layer isachieved, which may be between 0.5 micrometer and 3 micrometers, andafter the anneal, the wafer is cooled down to a safe temperature forunloading, which is between 700° C. to 900° C.

Example 3

In one example, a silicon wafer sliced from an ingot grown by theCzochralski method is cleaned using SC1 solution. The cleaning issufficient to obtain a chemical silicon oxide layer having a thicknessbetween 0.8 nm and 2.0 nm on the front surface of the silicon wafer. Thewafer is next loaded into a chemical vapor deposition chamber. The waferis heated up to a temperature from 850° C. to 1000° C. Once thetemperature set point is reached, the wafer is baked at the sametemperature for between 5 seconds to 60 seconds, preferably between 10seconds to 40 seconds. The ambient atmosphere in the CVD chamber iseither H₂ or a combination of H₂ and an etching gas such as HCl or Cl₂.The reducing atmosphere, which optionally comprises etching gas, isintroduced to the chamber to removal wafer surface contamination. Whenthe bake is complete, the wafer is subject to chemical vapor depositionof polycrystalline silicon seed at the same temperature as the reducingatmosphere bake. The thickness of the seed layer ranges from 10 nm to200 nm. After the seed layer is deposited to the desired thickness, thetemperature is ramped to a higher temperature to anneal out the residuefilm stress. The thickness of the seed layer is set by the size of thepolycrystalline silicon nuclei. To achieve effective stress release, theseed layer needs to cover the substrate surface while leaving voidssmaller than 50 nm, which enables the access of H₂ to the interfacebetween the polysilicon seed layer and oxide. H₂ reduces the interfacialoxide and promote the diffusion of the atoms at the grain boundaries ofthe polysilicon seed layer to the substrate and thus releases the filmstress. When the seed layer is thick enough to completely prevent H₂access to the interfacial oxide, the subsequent annealing process is notable to release the film stress effectively. On the other hand, when theseed layer is not continuous and the opening area between two adjacentnuclei is wider than 50 nm, large nuclei are formed after the oxidelayer is removed during the seed annealing process. The large nucleiwill grow into big grains (>1 um) at the end of polysilicon deposition,which reduces the trapping efficiency. Compared to example 2, thisexample provides additional in-situ control mechanism to engineer thefilm stress. The temperature for effective film stress release is 1000°C. or above, such as 1050° C. or 1100° C. The anneal soak time is 10seconds or longer, such as 30 seconds. Then the temperature is rampeddown to a lower temperature from 850° C. to 1000° C. At this reducedtemperature, the remainder of the polycrystalline silicon layer isdeposited. After the desired polycrystalline silicon thickness isdeposited, the wafer is cooled down to a safe temperature for unloading.After the desired thickness of the polycrystalline layer is achieved,which may be between 0.5 micrometer and 3 micrometers, the wafer iscooled down to a safe temperature for unloading, which is between 700°C. to 900° C.

As various changes could be made in the above compositions and processeswithout departing from the scope of the invention, it is intended thatall matter contained in the above description be interpreted asillustrative and not in a limiting sense.

When introducing elements of the present invention or the preferredembodiment(s) thereof, the articles “a,” “an,” “the,” and “said” areintended to mean that there are one or more of the elements. The terms“comprising,” “including,” and “having” are intended to be inclusive andmean that there may be additional elements other than the listedelements.

What is claimed is:
 1. A method of preparing a multilayer structure, themethod comprising: forming a semiconductor oxide layer, a semiconductornitride layer, or a semiconductor oxynitride layer in interfacialcontact with a front surface of a single crystal semiconductor handlesubstrate, the single crystal semiconductor handle substrate comprisingtwo major, generally parallel surfaces, one of which is the frontsurface of the single crystal semiconductor handle substrate and theother of which is a back surface of the single crystal semiconductorhandle substrate, a circumferential edge joining the front and backsurfaces of the single crystal semiconductor handle substrate, a centralplane between the front surface and the back surface of the singlecrystal semiconductor handle substrate, and a bulk region between thefront and back surfaces of the single crystal semiconductor handlesubstrate, wherein the single crystal semiconductor handle substrate hasa minimum bulk region resistivity of at least about 500 ohm-cm;annealing the single crystal semiconductor handle substrate comprisingthe semiconductor oxide layer, the semiconductor nitride layer, or thesemiconductor oxynitride layer in interfacial contact with the frontsurface thereof in an ambient atmosphere comprising a gas selected fromthe group consisting of hydrogen, hydrogen chloride, chlorine, and anycombination thereof, wherein the anneal of the single crystalsemiconductor handle substrate comprising the semiconductor oxide layer,the semiconductor nitride layer, or the semiconductor oxynitride layerforms a textured semiconductor oxide layer comprising holes having sizesbetween about 5 nanometers and about 1000 nanometers, a texturedsemiconductor nitride layer comprising holes having sizes between about5 nanometers and about 1000 nanometers, or a textured semiconductoroxynitride layer comprising holes having sizes between about 5nanometers and about 1000 nanometers; depositing a polycrystallinesilicon layer on the textured semiconductor oxide layer, the texturedsemiconductor nitride layer, or the textured semiconductor oxynitridelayer in interfacial contact with the front surface the single crystalsemiconductor handle substrate, wherein the polycrystalline siliconlayer is deposited by chemical vapor deposition; and bonding adielectric layer on a front surface of a single crystal semiconductordonor substrate to the polycrystalline silicon layer of the singlecrystal semiconductor handle substrate to thereby form a bondedstructure, wherein the single crystal semiconductor donor substratecomprises two major, generally parallel surfaces, one of which is thefront surface of the semiconductor donor substrate and the other ofwhich is a back surface of the semiconductor donor substrate, acircumferential edge joining the front and back surfaces of thesemiconductor donor substrate, and a central plane between the front andback surfaces of the semiconductor donor substrate.
 2. The method ofclaim 1 wherein the single crystal semiconductor handle substratecomprises a single crystal silicon handle wafer, and the semiconductornitride layer comprises silicon nitride.
 3. The method of claim 1wherein the single crystal semiconductor handle substrate comprises asingle crystal silicon handle wafer, and the semiconductor oxynitridelayer comprises silicon oxynitride.
 4. The method of claim 1 wherein thesemiconductor nitride layer is deposited on the front surface of thesingle crystal semiconductor handle substrate, wherein the semiconductornitride layer is formed by exposing the single crystal semiconductorhandle substrate to a nitriding medium selected from the groupconsisting of nitrogen, ammonia, and a combination thereof.
 5. Themethod of claim 4 wherein the semiconductor nitride layer has athickness between about 0.1 nanometers and about 25 nanometers.
 6. Themethod of claim 1 wherein the semiconductor oxynitride layer isdeposited on the front surface of the single crystal semiconductorhandle substrate, wherein the semiconductor oxynitride layer is formedby exposing the single crystal semiconductor handle substrate to anitriding medium selected from the group consisting of nitrogen,ammonia, and a combination thereof, and an oxidizing medium selectedfrom the group consisting of air, ozone, and an aqueous compositioncomprising an oxidizing agent.
 7. The method of claim 6 wherein thesemiconductor oxynitride layer or the semiconductor oxynitride layer hasa thickness between about 0.1 nanometers and about 25 nanometers.
 8. Themethod of claim 1 wherein the single crystal semiconductor handlesubstrate has a bulk resistivity between about 500 Ohm-cm and about100,000 Ohm-cm, or between about 1000 Ohm-cm and about 100,000 Ohm-cm.9. The method of claim 1 wherein the single crystal semiconductor handlesubstrate has a bulk resistivity between about 1000 ohm cm and about10,000 Ohm-cm, or between about 2000 Ohm cm and about 10,000 Ohm-cm. 10.The method of claim 1 wherein the single crystal semiconductor handlesubstrate has a bulk resistivity between about 3000 Ohm-cm and about10,000 Ohm-cm, or between about 3000 Ohm cm and about 5,000 Ohm-cm. 11.The method of claim 1 wherein the single crystal semiconductor handlesubstrate comprising the semiconductor oxide layer, the semiconductornitride layer, or the semiconductor oxynitride layer in interfacialcontact with the front surface thereof is annealed in an ambientatmosphere comprising hydrogen gas and a gas selected from the groupconsisting of hydrogen chloride, chlorine, and a combination of hydrogenchloride and chlorine.
 12. The method of claim 1 wherein the singlecrystal semiconductor handle substrate comprising the semiconductoroxide layer, the semiconductor nitride layer, or the semiconductoroxynitride layer in interfacial contact with the front surface thereofis annealed in an ambient atmosphere comprising a gas selected from thegroup consisting of hydrogen, hydrogen chloride, chlorine, and anycombination thereof at a temperature greater than about 850° C.
 13. Themethod of claim 1 wherein the polycrystalline silicon layer is depositedfrom a deposition ambient atmosphere comprising a silicon precursorselected from the group consisting of silane, trichlorosilane,dichlorosilane, and any combination thereof at a deposition rate of atleast about 0.1 micrometer/minute.
 14. The method of claim 1 wherein thepolycrystalline silicon layer is deposited from a deposition ambientatmosphere comprising a silicon precursor selected from the groupconsisting of silane, trichlorosilane, dichlorosilane, and anycombination thereof at a deposition rate between about 0.1micrometer/minute to about 2 micrometers/minute.
 15. The method of claim1 wherein deposition by chemical vapor deposition of the polycrystallinesilicon layer is interrupted after deposition of a polycrystallinesilicon seed layer, and further wherein the polycrystalline seed layeris annealed at a temperature greater than about 1000° C.
 16. The methodof claim 15 wherein the polycrystalline silicon seed layer has athickness of less than 3 micrometers.
 17. The method of claim 15 whereindeposition by chemical vapor deposition of the polycrystalline siliconlayer is resumed after cooling the single crystal semiconductor handlesubstrate to a temperature between about 850° C. and about 1000° C. 18.The method of claim 1 wherein deposition by chemical vapor deposition ofthe polycrystalline silicon layer is interrupted after deposition of apolycrystalline silicon seed layer, and further wherein thepolycrystalline seed layer is annealed at a temperature between about1000° C. and about 1100° C.
 19. The method of claim 18 wherein thepolycrystalline silicon seed layer has a thickness of less than 3micrometers.
 20. The method of claim 18 wherein deposition by chemicalvapor deposition of the polycrystalline silicon layer is resumed aftercooling the single crystal semiconductor handle substrate to atemperature between about 850° C. and about 1000° C.
 21. The method ofclaim 1 wherein the polycrystalline silicon layer has a thicknessbetween about 0.1 micrometer and about 50 micrometers.
 22. The method ofclaim 1 wherein the polycrystalline silicon layer has a thicknessbetween about 0.1 micrometer and about 20 micrometers.
 23. The method ofclaim 1 wherein the polycrystalline silicon layer is deposited at atemperature greater than about 850° C.
 24. The method of claim 1 whereinthe polycrystalline silicon layer is deposited at a temperature betweenabout 850° C. and about 1000° C.
 25. The method of claim 1 furthercomprising annealing the deposited polycrystalline silicon layer at atemperature greater than about 1000° C.
 26. The method of claim 1further comprising polishing the deposited polycrystalline silicon layerto a surface roughness, as measured by RMS_(2x2) um₂, of less than about5 angstroms.
 27. The method of claim 1 further comprising oxidizing thepolycrystalline silicon layer prior to bonding with the dielectric layeron the front surface of the single crystal semiconductor donorsubstrate.
 28. The method of claim 1 further comprising heating thebonded structure at a temperature and for a duration sufficient tostrengthen the bond between the dielectric layer of the semiconductordonor structure and the polycrystalline silicon layer on the texturedsemiconductor oxide layer, textured semiconductor nitride layer, ortextured semiconductor oxynitride layer in interfacial contact with thefront surface of the single semiconductor handle substrate.
 29. Themethod of claim 1 wherein the single crystal semiconductor donorsubstrate comprises an ion implanted damage layer.
 30. The method ofclaim 29 further comprising mechanically cleaving the bonded structureat the ion implanted damage layer of the single crystal semiconductordonor substrate to thereby prepare a cleaved structure comprising thesingle crystal semiconductor handle substrate; the texturedsemiconductor oxide layer, the textured semiconductor nitride layer, orthe textured semiconductor oxynitride layer; the polycrystalline siliconlayer; the dielectric layer in contact with the polycrystalline siliconlayer; and a single crystal semiconductor device layer in contact withthe dielectric layer.
 31. The method of claim 30 further comprisingheating the cleaved structure at a temperature and for a durationsufficient to strengthen the bond between the single crystalsemiconductor device layer and the polycrystalline silicon layer.
 32. Amethod of preparing a multilayer structure, the method comprising:forming a semiconductor oxide layer, a semiconductor nitride layer, or asemiconductor oxynitride layer in interfacial contact with a frontsurface of a single crystal semiconductor handle substrate, the singlecrystal semiconductor handle substrate comprising two major, generallyparallel surfaces, one of which is the front surface of the singlecrystal semiconductor handle substrate and the other of which is a backsurface of the single crystal semiconductor handle substrate, acircumferential edge joining the front and back surfaces of the singlecrystal semiconductor handle substrate, a central plane between thefront surface and the back surface of the single crystal semiconductorhandle substrate, and a bulk region between the front and back surfacesof the single crystal semiconductor handle substrate, wherein the singlecrystal semiconductor handle substrate has a minimum bulk regionresistivity of at least about 500 ohm-cm; annealing the single crystalsemiconductor handle substrate comprising the semiconductor oxide layer,the semiconductor nitride layer, or the semiconductor oxynitride layerin interfacial contact with the front surface thereof in an ambientatmosphere comprising a gas selected from the group consisting ofhydrogen, hydrogen chloride, chlorine, and any combination thereof,wherein the anneal of the single crystal semiconductor handle substratecomprising the semiconductor oxide layer, the semiconductor nitridelayer, or the semiconductor oxynitride layer forms a texturedsemiconductor oxide layer comprising holes having sizes between about 5nanometers and about 1000 nanometers, a textured semiconductor nitridelayer comprising holes having sizes between about 5 nanometers and about1000 nanometers, or a textured semiconductor oxynitride layer comprisingholes having sizes between about 5 nanometers and about 1000 nanometers;exposing the single crystal semiconductor handle substrate comprisingthe semiconductor oxide layer, the semiconductor nitride layer, or thesemiconductor oxynitride layer in interfacial contact with the frontsurface thereof to an ambient atmosphere comprising a silicon precursorat a temperature of at least about 850° C. to thereby deposit apolycrystalline silicon layer on the textured semiconductor oxide layer,the textured semiconductor nitride layer, or the textured semiconductoroxynitride layer; and bonding a dielectric layer on a front surface of asingle crystal semiconductor donor substrate to the polycrystallinesilicon layer of the single crystal semiconductor handle substrate tothereby form a bonded structure, wherein the single crystalsemiconductor donor substrate comprises two major, generally parallelsurfaces, one of which is the front surface of the semiconductor donorsubstrate and the other of which is a back surface of the semiconductordonor substrate, a circumferential edge joining the front and backsurfaces of the semiconductor donor substrate, and a central planebetween the front and back surfaces of the semiconductor donorsubstrate.
 33. The method of claim 32 wherein the single crystalsemiconductor handle substrate comprises a single crystal silicon handlewafer, and the semiconductor nitride layer comprises silicon nitride.34. The method of claim 32 wherein the single crystal semiconductorhandle substrate comprises a single crystal silicon handle wafer, andthe semiconductor oxynitride layer comprises silicon oxynitride.
 35. Themethod of claim 32 wherein the semiconductor nitride layer is depositedon the front surface of the single crystal semiconductor handlesubstrate, wherein the semiconductor nitride layer is formed by exposingthe single crystal semiconductor handle substrate to a nitriding mediumselected from the group consisting of nitrogen, ammonia, and acombination thereof.
 36. The method of claim 35 wherein thesemiconductor nitride layer has a thickness between about 0.1 nanometersand about 25 nanometers.
 37. The method of claim 32 wherein thesemiconductor oxynitride layer is deposited on the front surface of thesingle crystal semiconductor handle substrate, wherein the semiconductoroxynitride layer is formed by exposing the single crystal semiconductorhandle substrate to a nitriding medium selected from the groupconsisting of nitrogen, ammonia, and a combination thereof, and anoxidizing medium selected from the group consisting of air, ozone, andan aqueous composition comprising an oxidizing agent.
 38. The method ofclaim 37 wherein the semiconductor oxynitride layer or the semiconductoroxynitride layer has a thickness between about 0.1 nanometers and about25 nanometers.
 39. The method of claim 32 wherein the single crystalsemiconductor handle substrate has a bulk resistivity between about 500Ohm-cm and about 100,000 Ohm-cm, or between about 1000 Ohm-cm and about100,000 Ohm-cm.
 40. The method of claim 32 wherein the single crystalsemiconductor handle substrate has a bulk resistivity between about 1000ohm cm and about 10,000 Ohm-cm, or between about 2000 Ohm cm and about10,000 Ohm-cm.
 41. The method of claim 32 wherein the single crystalsemiconductor handle substrate has a bulk resistivity between about 3000Ohm-cm and about 10,000 Ohm-cm, or between about 3000 Ohm cm and about5,000 Ohm-cm.
 42. The method of claim 32 wherein the single crystalsemiconductor handle substrate comprising the semiconductor oxide layer,the semiconductor nitride layer, or the semiconductor oxynitride layerin interfacial contact with the front surface thereof is annealed in anambient atmosphere comprising hydrogen gas and a gas selected from thegroup consisting of hydrogen chloride, chlorine, and a combination ofhydrogen chloride and chlorine.
 43. The method of claim 32 wherein thesingle crystal semiconductor handle substrate comprising thesemiconductor oxide layer, the semiconductor nitride layer, or thesemiconductor oxynitride layer in interfacial contact with the frontsurface thereof is annealed in an ambient atmosphere comprising a gasselected from the group consisting of hydrogen, hydrogen chloride,chlorine, and any combination thereof at a temperature greater thanabout 850° C.
 44. The method of claim 32 wherein the silicon precursoris selected from the group consisting of silane, trichlorosilane,dichlorosilane, and any combination thereof, and the polycrystallinesilicon layer is deposited at a deposition rate of at least about 0.1micrometer/minute.
 45. The method of claim 32 wherein the siliconprecursor is selected from the group consisting of silane,trichlorosilane, dichlorosilane, and any combination thereof, and thepolycrystalline silicon layer is deposited at a deposition rate betweenabout 0.1 micrometer/minute to about 2 micrometers/minute.
 46. Themethod of claim 32 wherein deposition of the polycrystalline siliconlayer is interrupted after deposition of a polycrystalline silicon seedlayer having a thickness of less than 3 micrometers, and further whereinthe polycrystalline seed layer is annealed at a temperature greater thanabout 1000° C.
 47. The method of claim 32 wherein the polycrystallinesilicon layer has a thickness between about 0.1 micrometer and about 50micrometers.
 48. The method of claim 32 wherein the polycrystallinesilicon layer has a thickness between about 0.1 micrometer and about 20micrometers.
 49. The method of claim 32 wherein the polycrystallinesilicon layer is deposited at a temperature between about 850° C. andabout 1000° C.
 50. The method of claim 32 further comprising annealingthe deposited polycrystalline silicon layer at a temperature greaterthan about 1000° C.
 51. The method of claim 32 further comprisingpolishing the deposited polycrystalline silicon layer to a surfaceroughness, as measured by RMS_(2×2 um2), of less than about 5 angstroms.52. The method of claim 32 further comprising oxidizing thepolycrystalline silicon layer prior to bonding with the dielectric layeron a front surface of a single crystal semiconductor donor substrate.53. The method of claim 32 further comprising heating the bondedstructure at a temperature and for a duration sufficient to strengthenthe bond between the dielectric layer of the semiconductor donorstructure and the polycrystalline silicon layer on the texturedsemiconductor oxide layer, textured semiconductor nitride layer, ortextured semiconductor oxynitride layer in interfacial contact with thefront surface of the single semiconductor handle substrate.
 54. Themethod of claim 32 wherein the single crystal semiconductor donorsubstrate comprises an ion implanted damage layer.
 55. The method ofclaim 54 further comprising mechanically cleaving the bonded structureat the ion implanted damage layer of the single crystal semiconductordonor substrate to thereby prepare a cleaved structure comprising thesingle crystal semiconductor handle substrate; the texturedsemiconductor oxide layer, the textured semiconductor nitride layer, orthe textured semiconductor oxynitride layer; the polycrystalline siliconlayer; the dielectric layer in contact with the polycrystalline siliconlayer; and a single crystal semiconductor device layer in contact withthe dielectric layer.
 56. The method of claim 55 further comprisingheating the cleaved structure at a temperature and for a durationsufficient to strengthen the bond between the single crystalsemiconductor device layer and the polycrystalline silicon layer.
 57. Amultilayer structure comprising: a single crystal semiconductor handlesubstrate comprising two major, generally parallel surfaces, one ofwhich is a front surface of the single crystal semiconductor handlesubstrate and the other of which is a back surface of the single crystalsemiconductor handle substrate, a circumferential edge joining the frontand back surfaces of the single crystal semiconductor handle substrate,a central plane between the front surface and the back surface of thesingle crystal semiconductor handle substrate, and a bulk region betweenthe front and back surfaces of the single crystal semiconductor handlesubstrate, wherein the single crystal semiconductor handle substrate hasa minimum bulk region resistivity of at least about 500 ohm-cm; atextured semiconductor oxide layer, a textured semiconductor nitridelayer, or a textured semiconductor oxynitride layer in interfacialcontact in interfacial contact with the front surface of the singlecrystal semiconductor handle substrate, wherein the texturedsemiconductor oxide layer comprises holes having sizes between about 5nanometers and about 1000 nanometers, the textured semiconductor nitridelayer comprises holes having sizes between about 5 nanometers and about1000 nanometers, or the textured semiconductor oxynitride layercomprises holes having sizes between about 5 nanometers and about 1000nanometers; a polycrystalline silicon layer in interfacial contact withthe textured semiconductor oxide layer, the textured semiconductornitride layer, or the textured semiconductor oxynitride layer; adielectric layer in interfacial contact with the polycrystalline siliconlayer; and a single crystal semiconductor device layer in interfacialcontact with the dielectric layer, wherein the multilayer structure haswafer bow as measured by at least three points on the front surface ofthe semiconductor device layer and/or the back surface of the singlecrystal semiconductor handle substrate of less than about 80micrometers.
 58. The multilayer structure of claim 57 wherein the singlecrystal semiconductor handle substrate comprises a single crystalsilicon wafer, and the textured semiconductor oxide layer comprisestextured silicon dioxide.
 59. The multilayer structure of claim 57wherein the single crystal semiconductor handle substrate comprises asingle crystal silicon wafer, and the s textured emiconductor nitridelayer comprises textured silicon nitride.
 60. The multilayer structureof claim 57 wherein the single crystal semiconductor handle substratecomprises a single crystal silicon wafer, and the textured semiconductoroxynitride layer comprises textured silicon oxynitride.
 61. Themultilayer structure of claim 57 wherein the textured semiconductoroxide layer, the textured semiconductor nitride layer, or the texturedsemiconductor oxynitride layer has a thickness between about 0.1nanometers and about 25 nanometers.
 62. The multilayer structure ofclaim 57 wherein the single crystal semiconductor handle substrate has abulk resistivity between about 500 Ohm-cm and about 100,000 Ohm-cm. 63.The multilayer structure of claim 57 wherein the single crystalsemiconductor handle substrate has a bulk resistivity between about 1000ohm cm and about 10,000 Ohm-cm.
 64. The multilayer structure of claim 57wherein the single crystal semiconductor handle substrate has a bulkresistivity between about 3000 Ohm cm and about 5,000 Ohm-cm.
 65. Themultilayer structure of claim 57 wherein the polycrystalline siliconlayer has a thickness between about 0.1 micrometer and about 10micrometers.
 66. The multilayer structure of claim 57 wherein thepolycrystalline silicon layer has a thickness between about 0.5micrometer and about 5 micrometers.
 67. The multilayer structure ofclaim 57 wherein the wafer bow as measured by at least three points onthe front surface of the semiconductor device layer and/or the backsurface of the single crystal semiconductor handle substrate of lessthan about 60 micrometers.
 68. The multilayer structure of claim 57wherein the wafer bow as measured by at least three points on the frontsurface of the semiconductor device layer and/or the back surface of thesingle crystal semiconductor handle substrate of less than about 20micrometers.